ss22 thru ss210 features for surface mounted applications. low profile package. built-in strain relief. metal silicon junction, majority carrier conduction. low power loss, high efficiency. high current capability, low forward voltage drop. high surge capability. absolute maximum ratings ta = 25 parameter symbol ss22 ss23 ss24 ss25 SS26 ss29 ss210 unit maximum repetitive peak reverse voltage v rrm 20 30 40 50 60 90 100 v maximum rms voltage v rms 14 21 28 35 42 63 70 v maximum dc blocking voltage v dc 20 30 40 50 60 90 100 v maximum average forward rectified current at tl i (av) a peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm a maximum instantaneous forward voltage at 2.0a * 1 v f v typical thermal resistance r ja r jl /w operating junction temperature range t j storage temperature range t stg * 1. pulse test: 300 s pulse width, 1% duty cycle. 0.5 0.7 2 50 0.85 maximum dc reverse current * 1 t a =25 at rated dc blocking voltage t a =100 i r 0.4 55 17 -65to+150 -65to+150 ma -65to+125 10 0.1 20 sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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